%0 Journal Article
%T Investigation on Interfaces in Amorphous Silicon/Carbon Superlattices<br>a-Si:H/a-C:H超晶格的界面研究
%A Mei Xiangyang/Institute of Semiconductors
%A Academia Sinica
%A BeijingLiao Xianbo/Institute of Semiconductors
%A Academia Sinica
%A BeijingLu Minhua/Institute of Semiconductors
%A Academia Sinica
%A BeijingKong Guanglin/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>梅向阳
%A 廖显伯
%A 陆珉华
%A 孔光临
%J 半导体学报
%D 1989
%I 
%X The interfacial structure and spin density in a-Si:H/a-C:H superlattices made by GD pro-cess have been investigated by means of TEM and ESR measurements,respectively.The re-sults obtained show an indication of an excess transition layer near the interfaces,the thicknessof which is in the range of 6-15A. A large excess spin density, in the order of 10~(13)cm~(-2), nearthe interfaces is also observed, which may be attributed to the interface mismatch betweenamorphous silicom and carbon sublayers.
%K Superlattice
%K Interface
%K TEM
%K ESR<br>超晶格
%K 界面
%K TEM
%K ESR
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F3073EFB8F28E7EA6726&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=5D311CA918CA9A03&sid=ED9DF3402785F68D&eid=6EEC242D0D8BE428&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1