HFET Small Signal Model Extraction from S Parameters Using Simulated Annealing Algorithm
用模拟退火算法从S参数提取HFET小信号等效电路模型参数

In the design of microwave devices and integrated circuits,it is very im portant to extract the HFET small signal equalized circuit m odel accurately.The solution of HFET model extraction with high quality using the simulated annealing al- gorithm is obtained.The solution is the global optim um without any influence of the initial value on it.What's m ore,the method avoids the non- unique solution occuring frequently when the local optim um algorithm is used.Provided that the value of gate resistance is acquired from measurement,the precision of the solution can be improved further.The m ethod can also be used to extract the m odel param eters of HBT,capacitor and inductor.