%0 Journal Article
%T HFET Small Signal Model Extraction from S Parameters Using Simulated Annealing Algorithm<br>用模拟退火算法从S参数提取HFET小信号等效电路模型参数
%A CHEN Jun
%A LIU Xun- chun
%A <br>陈俊
%A 刘训春
%J 半导体学报
%D 2001
%I 
%X In the design of microwave devices and integrated circuits,it is very im portant to extract the HFET small signal equalized circuit m odel accurately.The solution of HFET model extraction with high quality using the simulated annealing al- gorithm is obtained.The solution is the global optim um without any influence of the initial value on it.What's m ore,the method avoids the non- unique solution occuring frequently when the local optim um algorithm is used.Provided that the value of gate resistance is acquired from measurement,the precision of the solution can be improved further.The m ethod can also be used to extract the m odel param eters of HBT,capacitor and inductor.
%K parameter extraction
%K simulated annealing algorithm
%K HFET
%K S parameter
%K sm all signal equivalent circuit m ode<br>参数提取
%K 模拟退火算法
%K HFET
%K S参数
%K 小信号等效电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4CC963A54B708A0A&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=CA4FD0336C81A37A&sid=9C65ADEB5990B252&eid=0D0D661F0B316AD5&journal_id=1674-4926&journal_name=半导体学报&referenced_num=6&reference_num=8