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半导体学报 1990
Design of Long-Wavelength InGaAs/InGaAsP/InP Avalanche Photodiodes with Separate Absorption, Grading and Multiplication Regions and Step-Like Kinks of Ip-V Curve
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Abstract:
The device parameters of a InGaAs/InGaAsP/InP SAGM-APD are designed and estimated according to the requirements of the avalanche field and the field limiting tunneling current in the device. Two kinks of the I_p-V curve were observed and explained. We have shown that the suitable ratio of V_(th)/V_B is about 1/3 and an experience formula is found, which is in agreement with the meaured results of Mp.
