%0 Journal Article
%T Design of Long-Wavelength InGaAs/InGaAsP/InP Avalanche Photodiodes with Separate Absorption, Grading and Multiplication Regions and Step-Like Kinks of Ip-V Curve<br>InGaAs/InGaAsP/InP SAGM-APD器件设计考虑及I_P—V曲线二级阶梯状扭折
%A Ding Guoqing/Wuhan Telecommunication
%A Devices Co
%A <br>丁国庆
%J 半导体学报
%D 1990
%I 
%X The device parameters of a InGaAs/InGaAsP/InP SAGM-APD are designed and estimated according to the requirements of the avalanche field and the field limiting tunneling current in the device. Two kinks of the I_p-V curve were observed and explained. We have shown that the suitable ratio of V_(th)/V_B is about 1/3 and an experience formula is found, which is in agreement with the meaured results of Mp.
%K Avalanche Photodiodes
%K Heterojunction
%K Two Step-like kinks<br>半导体器件
%K 参数测量
%K Ip－V曲线
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D08BF9A754775DC9&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=F3090AE9B60B7ED1&sid=1F7317C17A9AF4FA&eid=EEAFC972BAD75B1F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=2