A Novel Low-Cost Wideband Si-Based Submount for 40Gb/s Optoelectronic Devices
用于40Gb/s光电子器件的新型低成本硅基过渡热沉

A novel low-cost wideband Si-based submount is proposed and fabricated for 40Gb/s optoelectronic devices.In the submount,a CPW transmission line is directly formed on a high-resistivity Si substrate and exhibits a transmission loss as low as 0.165dB/mm up to 40GHz.The submount contains a Ta_2N thin-film resistor for impedance matching,and a low reflection coefficient of less than -18dB up to 40GHz is achieved.Such a configuration has the advantages of simplified fabrication procedures and efficient heat dissipation.As a demonstration,the Si-based submount is used in a high-speed electroabsorption (EA) modulator for chip-level packaging.The small-signal modulation bandwidth is measured to be over 33GHz,which is the first report of 40Gb/s optoelectronic devices on a Si-based submount.