%0 Journal Article
%T A Novel Low-Cost Wideband Si-Based Submount for 40Gb/s Optoelectronic Devices<br>用于40Gb/s光电子器件的新型低成本硅基过渡热沉
%A Xiong Bing
%A Wang Jian
%A Cai Pengfei
%A Tian Jianbo
%A Sun Changzheng
%A Luo Yi
%A <br>熊兵
%A 王健
%A 蔡鹏飞
%A 田建柏
%A 孙长征
%A 罗毅
%J 半导体学报
%D 2005
%I 
%X A novel low-cost wideband Si-based submount is proposed and fabricated for 40Gb/s optoelectronic devices.In the submount,a CPW transmission line is directly formed on a high-resistivity Si substrate and exhibits a transmission loss as low as 0.165dB/mm up to 40GHz.The submount contains a Ta_2N thin-film resistor for impedance matching,and a low reflection coefficient of less than -18dB up to 40GHz is achieved.Such a configuration has the advantages of simplified fabrication procedures and efficient heat dissipation.As a demonstration,the Si-based submount is used in a high-speed electroabsorption (EA) modulator for chip-level packaging.The small-signal modulation bandwidth is measured to be over 33GHz,which is the first report of 40Gb/s optoelectronic devices on a Si-based submount.
%K wideband Si-based submount
%K high-speed EA modulator
%K high-resistivity Si substrate
%K low-loss CPW transmission line
%K thin-film resistor<br>宽带硅基过渡热沉
%K 高速电吸收调制器
%K 高阻率硅衬底
%K 低损耗共面波导
%K 薄膜电阻
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=060CADA5B699E38C&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=F3090AE9B60B7ED1&sid=14E7EF987E4155E6&eid=2DD7160C83D0ACED&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12