An Empirical Direct Tunneling Current Expression for Ultra-Thin Oxide nMOSFETs
一个超薄氧化物nMOSFET器件的直接隧穿电流经验公式(英文)

An empirical expression for the direct tunneling (DT) current is obtained.This expression can be used to calculate the DT current for nMOSFETs with ultra thin oxide when the oxide thickness is considered as an adjustable parameter.The results have good agreement with the experimental data.And the oxide thickness obtained is less than the value acquired from the capacitance voltage( C V )method.