%0 Journal Article
%T An Empirical Direct Tunneling Current Expression for Ultra-Thin Oxide nMOSFETs<br>一个超薄氧化物nMOSFET器件的直接隧穿电流经验公式(英文)
%A Zhang Heqiu
%A Xu Mingzhen
%A Tan Changhua
%A <br>张贺秋
%A 许铭真
%A 谭长华
%J 半导体学报
%D 2004
%I 
%X An empirical expression for the direct tunneling (DT) current is obtained.This expression can be used to calculate the DT current for nMOSFETs with ultra thin oxide when the oxide thickness is considered as an adjustable parameter.The results have good agreement with the experimental data.And the oxide thickness obtained is less than the value acquired from the capacitance voltage( C V )method.
%K direct tunnel current
%K nMOSFETs
%K ultra
%K thin<br>直接隧穿电流
%K nMOSFET
%K 超薄
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=88C376387D8445E1&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=94C357A881DFC066&sid=AF0641F74554D706&eid=89389F643CA3F778&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=13