Simulation of EI-Interface Voltage in an EIS-Type Semiconductor Biochemical Sensor
EIS型半导体生化传感器EI界面势的理论模拟

An EI(electrolyte insulator)-interface voltage model suitable for EIS(electrolyte insulator semiconductor) sensor is proposed.Based on this model a CAA program is developed.Using this program,the voltage distribution of the double layer,density of electriferous sites, and EI-interface voltage are quantificationally analyzed.Finally, to certify this model,the contrast of the simulated results with the experiment data of ISFET (ion sensitive field effect transistor) is given.