%0 Journal Article
%T Simulation of EI-Interface Voltage in an EIS-Type Semiconductor Biochemical Sensor<br>EIS型半导体生化传感器EI界面势的理论模拟
%A Jia Yunfang
%A Niu Wencheng
%A Zhang Fuhai
%A Liu Guohua
%A Yu Mei
%A <br>贾芸芳
%A 牛文成
%A 张福海
%A 刘国华
%A 俞梅
%J 半导体学报
%D 2005
%I 
%X An EI(electrolyte insulator)-interface voltage model suitable for EIS(electrolyte insulator semiconductor) sensor is proposed.Based on this model a CAA program is developed.Using this program,the voltage distribution of the double layer,density of electriferous sites, and EI-interface voltage are quantificationally analyzed.Finally, to certify this model,the contrast of the simulated results with the experiment data of ISFET (ion sensitive field effect transistor) is given.
%K semiconductor biochemical sensor
%K EI interface voltage model
%K CAA<br>半导体生化传感器
%K EI界面势模型
%K 计算机辅助分析
%K 半导体
%K 生化传感器
%K 界面势
%K 理论模拟
%K Sensor
%K Biochemical
%K Semiconductor
%K Voltage
%K 验证
%K 比较
%K 实测结果
%K sensitive
%K field
%K effect
%K transistor
%K ISFET
%K 模拟结果
%K 定量分析
%K 点密度
%K 电势分布
%K 双电层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9E6B0C8FADD20586&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=708DD6B15D2464E8&sid=432CEFFE65BEDE92&eid=38FD9C56F835A0BD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=27