Simulation of Power Fast Recovery Diodes Using Local Lifetime Controlling Technique
用局域寿命控制技术改善功率快恢复二极管性能的仿真研究

The influence of parameters of the local low-lifetime region on the performance of fast recovery silicon power diodes is simulated.Comprehensive and systematic results are obtained,including the influence of different locations of the low-lifetime region in the diode and the different locations of the recombination center level in the energy gap on the following separate factors:reverse recovery time (t rr),reverse recovery softness factor (S),forward voltage drop (V F),and high temperature leakage current (I R).Furthermore,the influence of the parameters of the local low-lifetime region on the tradeoff between t rr and S,t rr and V F,trr and I R is also studied.These results have an important reference value on the research of the lifetime engineering for high-speed power device and device manufacture engineering.