%0 Journal Article
%T Simulation of Power Fast Recovery Diodes Using Local Lifetime Controlling Technique<br>用局域寿命控制技术改善功率快恢复二极管性能的仿真研究
%A Wu He
%A Wu Yu
%A Kang Baowei
%A Jia Yunpeng
%A <br>吴鹤
%A 吴郁
%A 亢宝位
%A 贾云鹏
%J 半导体学报
%D 2003
%I 
%X The influence of parameters of the local low-lifetime region on the performance of fast recovery silicon power diodes is simulated.Comprehensive and systematic results are obtained,including the influence of different locations of the low-lifetime region in the diode and the different locations of the recombination center level in the energy gap on the following separate factors:reverse recovery time (t rr),reverse recovery softness factor (S),forward voltage drop (V F),and high temperature leakage current (I R).Furthermore,the influence of the parameters of the local low-lifetime region on the tradeoff between t rr and S,t rr and V F,trr and I R is also studied.These results have an important reference value on the research of the lifetime engineering for high-speed power device and device manufacture engineering.
%K local lifetime control
%K tradeoff
%K axis location
%K location of recombination center level in energy gap<br>局域寿命控制
%K 参数折衷
%K 轴向位置
%K 复合中心能级位置
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B7750A64BF9B8210&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=94C357A881DFC066&sid=F3A3627BFEF439C1&eid=F3549E0657848E2A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=10