Influence of Isoelectronic Impurity Sb on Defects in InP
等电子杂质Sb对InP中缺陷的影响

The native defect of InP crystals doped with Sb has been studied by means of PL and positronannihilation techniques. It is found that the V_p or V_p-impurity complex is responsible for thedisappearence of the luminescence band at 1.18 eV, Moreover,the lifetime spectra measurementsmanifest a reduction of the vacant type defect for Sb doped crystals.It is believed that the nativedefect of InP crystals can be effectively reduced by the introduction of Sb isoelectronic impurity.