%0 Journal Article
%T Influence of Isoelectronic Impurity Sb on Defects in InP<br>等电子杂质Sb对InP中缺陷的影响
%A Ye Shizhong/Institute of semiconductors
%A Academia Sinica
%A BeijingYang Baohua/Institute of semiconductors
%A Academia Sinica
%A BeijingXu Ling/Institute of semiconductors
%A Academia Sinica
%A Beijing
%A <br>叶式中
%A 杨保华
%A 徐岭
%J 半导体学报
%D 1990
%I 
%X The native defect of InP crystals doped with Sb has been studied by means of PL and positronannihilation techniques. It is found that the V_p or V_p-impurity complex is responsible for thedisappearence of the luminescence band at 1.18 eV, Moreover,the lifetime spectra measurementsmanifest a reduction of the vacant type defect for Sb doped crystals.It is believed that the nativedefect of InP crystals can be effectively reduced by the introduction of Sb isoelectronic impurity.
%K Positron annihilation
%K Native defect
%K isoelectronic impurity<br>InP
%K Sb
%K 电子杂质
%K 缺陷
%K 正电子湮没
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=17A179387A7D1927&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=E158A972A605785F&sid=82722E2B785EBF0D&eid=4290346F7268639E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2