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半导体学报 2000
Nanocrystalline SiC Films Grown Si by HFCVD Method and Its Photoluminescence
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Abstract:
The nano\|crystalline silicon carbide films are grown on Si substrates by Hot Filament Chemical Vapor Deposition (HFCVD).X\|Ray Diffraction (XRD),X\|ray Photoelectron Spectrum (XPS), Fourier Infrared Absorb Spectrum (FTIR),Ultraviolet Raman Scatter Spectrum,High definition Rate Transmission Electron Microscope (HRTEM) and many other methods are employed to analyze the composition and the structure of the films.The results reveal that the films should be provided with nanocrystalline characteristic in structure.Intensive visible\|light emitting has been observed at room temperature in photoluminescence experiments.