Photoemission Study of Pd/a-Si:H Interface
Pd/a-Si:H界面的光电子能谱研究

Using both ultraviolet and X-ray photoemission spectroscopy,Ne have studied thePd/a-Si: H system and the effects of the changes of chemical bondi.and composition at inter-faces on the electronic structure anl on the core level spectra, The results have been comparedwith that of the Pd/c-Si system. It is shown that both Pd/a-Si:H interface and Pd/c-Si interfacehave similar electronic structure and interfacial characteristic.However,Pd atoms in a-Si:Hhave higher diffusibility, and are under more Si-rich circumstance than in c-Si.