%0 Journal Article
%T Photoemission Study of Pd/a-Si:H Interface<br>Pd/a-Si:H界面的光电子能谱研究
%A Zhao Texiu/
%A <br>赵特秀
%A 沈波
%A 刘洪图
%A 季明荣
%A 吴建新
%A 许振嘉
%J 半导体学报
%D 1989
%I 
%X Using both ultraviolet and X-ray photoemission spectroscopy,Ne have studied thePd/a-Si: H system and the effects of the changes of chemical bondi.and composition at inter-faces on the electronic structure anl on the core level spectra, The results have been comparedwith that of the Pd/c-Si system. It is shown that both Pd/a-Si:H interface and Pd/c-Si interfacehave similar electronic structure and interfacial characteristic.However,Pd atoms in a-Si:Hhave higher diffusibility, and are under more Si-rich circumstance than in c-Si.
%K Metal-semiconductor interface
%K Amorphous silicon
%K Silicide
%K UPS
%K XPS<br>金属
%K 半导体
%K 界面
%K 非晶硅
%K 硅化物
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307BF236987FD1AAAEA&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=59906B3B2830C2C5&sid=9C6D270E246D943F&eid=0FBB0D015A3E9A88&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0