Calculation of Some Parameters in Silicon Irradiated by Laser Pulses
激光脉冲照射硅时若干物理量的计算

The temporal evolution and spatial distribution of the lattice temperature, carrier concentration and carrier temperature induced in silicon by nanosecond and picosecond laser pulses are calculated. A set of simultaneous partial equations for lattice temperature, carrier concentration, carrier temperature and laser intensity is numerically solved by using the computer software package, PDECOL. It is shown that the energy relaxation time of hot carriers should be about lps or less. The calculated melting thresholds are in agreement with the experimental thresholds.