%0 Journal Article
%T Calculation of Some Parameters in Silicon Irradiated by Laser Pulses<br>激光脉冲照射硅时若干物理量的计算
%A Zhu Zhenhe/
%A <br>朱振和
%J 半导体学报
%D 1990
%I 
%X The temporal evolution and spatial distribution of the lattice temperature, carrier concentration and carrier temperature induced in silicon by nanosecond and picosecond laser pulses are calculated. A set of simultaneous partial equations for lattice temperature, carrier concentration, carrier temperature and laser intensity is numerically solved by using the computer software package, PDECOL. It is shown that the energy relaxation time of hot carriers should be about lps or less. The calculated melting thresholds are in agreement with the experimental thresholds.
%K laser annealing
%K Silicon
%K Nanosecond pulse
%K Picosecond pulse<br>硅晶体
%K 激光脉冲
%K 激光退火
%K 物理量
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=64078D347A1FDB8C&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=9CF7A0430CBB2DFD&sid=66D0A4667FE1A38D&eid=B28C697BC3A1BA62&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0