Hot-Carrier Effects in Deep Sub-Micron MOSFET''''s
深亚微米MOS器件的热载流子效应

The hot carrier effects (HCE) in deep sub-micron devices has been studied.The relations between generation and injection of channel hot carriers and three kinds of main bias conditions:the high voltage,the medium voltage and the low voltage are investigated.The impact of hot-carrier effects on circuit performance is also discussed on the basis of mechanisms of hot carriers induced failure.It is presented that the factors that affect hot-carrier effects of transistors include:the size,frequency,load capacitors,input velocity and the positions of transistors.The device degradation induced by HCE can be reduced by studying these failure factors to resign the circuits.