%0 Journal Article
%T Hot-Carrier Effects in Deep Sub-Micron MOSFET''''s<br>深亚微米MOS器件的热载流子效应
%A 刘红侠
%A 郝跃
%A 孙志
%J 半导体学报
%D 2001
%I 
%X The hot carrier effects (HCE) in deep sub-micron devices has been studied.The relations between generation and injection of channel hot carriers and three kinds of main bias conditions:the high voltage,the medium voltage and the low voltage are investigated.The impact of hot-carrier effects on circuit performance is also discussed on the basis of mechanisms of hot carriers induced failure.It is presented that the factors that affect hot-carrier effects of transistors include:the size,frequency,load capacitors,input velocity and the positions of transistors.The device degradation induced by HCE can be reduced by studying these failure factors to resign the circuits.
%K deep submicron
%K MOSFET's
%K hot-carrier effects
%K reliability<br>深亚微米
%K MOS器件
%K 热载流子效应
%K 可靠性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2A11C0D061C7058D&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=B31275AF3241DB2D&sid=BDEE8BA20F4733DB&eid=1F7317C17A9AF4FA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=6&reference_num=5