Novel Type of Wide-Bandwidth GaAs/AIGaAs Infrared Photodetectors
Novel Type of Wide-Bandwidth GaAs/AlGaAs Infrared Photodetectors

A novel asymmetrical GaAs/AlGaAs photoconductance infrared detector based on the new idea proposed in this paper has been developed,which uses the intersubband transition within the same conduction (valence) band due to infrared radiation.The detectors with two wells or six wells grown by Metalorganic Chemical Vapor Deposition (MOCVD) system are fabricated by etching a mesa size of 200μm×200μm.Evident infrared absorption on the wavelength from 5 to 10μm has been observed for two samples,so has the peak of n...