%0 Journal Article
%T Novel Type of Wide-Bandwidth GaAs/AIGaAs Infrared Photodetectors<br>Novel Type of Wide-Bandwidth GaAs/AlGaAs Infrared Photodetectors
%A 史衍丽
%A 邓军
%A 尹洁
%A 廉鹏
%A 董欣
%A 杜金玉
%A 高国
%A 邹德恕
%A 陈建新
%A 沈光地
%J 半导体学报
%D 2000
%I 
%X A novel asymmetrical GaAs/AlGaAs photoconductance infrared detector based on the new idea proposed in this paper has been developed,which uses the intersubband transition within the same conduction (valence) band due to infrared radiation.The detectors with two wells or six wells grown by Metalorganic Chemical Vapor Deposition (MOCVD) system are fabricated by etching a mesa size of 200μm×200μm.Evident infrared absorption on the wavelength from 5 to 10μm has been observed for two samples,so has the peak of n...
%K GaAs/AlGaAs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D4E9AB7F1F241513&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=DF92D298D3FF1E6E&sid=039DCCB9394D9766&eid=9BF3B0483F192149&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8