Excited-State Lasing of InAs/GaAs Self-Organized Quantum Dot
InAs/GaAs自组织量子点激发态的激射

To investigate the origin of stimulated emission of a Quantum Dot (QD) laser, lasers with or without QDs as active region have been grown by MBE According to the PL and EL properties, the QD energy levels in QD laser are distinctively resolved due to the band filling effect, and the lasing energy is realized at the excited level, which is much lower than that of the laser with only a wetting layer The reported QD laser has proved to be lasing from the excited state of quantum dots