%0 Journal Article
%T Excited-State Lasing of InAs/GaAs Self-Organized Quantum Dot<br>InAs/GaAs自组织量子点激发态的激射
%A WANG Hui
%A NIU Zhi chuan
%A WANG Hai long
%A WANG Xiao dong
%A FENG Song lin
%A <br>汪辉
%A 牛智川
%A 王海龙
%A 王晓东
%A 封松林
%J 半导体学报
%D 2001
%I 
%X To investigate the origin of stimulated emission of a Quantum Dot (QD) laser, lasers with or without QDs as active region have been grown by MBE According to the PL and EL properties, the QD energy levels in QD laser are distinctively resolved due to the band filling effect, and the lasing energy is realized at the excited level, which is much lower than that of the laser with only a wetting layer The reported QD laser has proved to be lasing from the excited state of quantum dots
%K self
%K organized quantum dots
%K QD laser
%K stimulated emission
%K band
%K filling effect<br>自组织量子点
%K 量子点激光器
%K 受激发射
%K 能带填充效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=538E532D454E8993&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=38B194292C032A66&sid=AF507FDD66D991DA&eid=88D36036CFF69B3C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=7