Low-Frequency Oscillation of MESFET Channel Current Under Sidegating Bias
旁栅电压下MESFET沟道电流的低频振荡

The low-frequency oscillation of channel current by test ing the MESFET output characteristic in different sidegating bias conditions is presented.It is found that whether the sidegating bias changes positively or negatively,there is always a threshold voltage to eliminate the oscillation.The pheno menon is related to the Channel-Substrate (C-S) junction properties and the impact ionization of traps-EL2 in high fields.