%0 Journal Article
%T Low-Frequency Oscillation of MESFET Channel Current Under Sidegating Bias<br>旁栅电压下MESFET沟道电流的低频振荡
%A DING Yong
%A ZHAO Fu-chuan
%A MAO You-de
%A XIA Guan-qun
%A ZHAO Jian-long
%A <br>丁勇
%A 赵福川
%A 毛友德
%A 夏冠群
%A 赵建龙
%J 半导体学报
%D 2000
%I 
%X The low-frequency oscillation of channel current by test ing the MESFET output characteristic in different sidegating bias conditions is presented.It is found that whether the sidegating bias changes positively or negatively,there is always a threshold voltage to eliminate the oscillation.The pheno menon is related to the Channel-Substrate (C-S) junction properties and the impact ionization of traps-EL2 in high fields.
%K low-freqneucy osillation
%K channel-substrate (C-S)
%K junction
%K ionization of traps-EL_2<br>低频振荡
%K 沟道-衬底结
%K EL_2碰撞电离
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1EB087B54925612A&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=59906B3B2830C2C5&sid=323ACE6C9CE37BAB&eid=2C05A9EACD668BFF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=7