Optimization of InGaAs Quantum Dots for Optoelectronic Applications
自组织量子点的优化生长(英文)

Self-assembled In 0.35Ga 0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM).In order to obtain high density and high uniformity of quantum dots,optimized conditions are concluded for MBE growth.Optimized growth conditions also compared with these of InAs/GaAs quantum dots.This will be very useful for InGaAs/GaAs QDs optoelectronic applications,such as quantum dots lasers and quantum dots infrared photodetectors.