%0 Journal Article
%T Optimization of InGaAs Quantum Dots for Optoelectronic Applications<br>自组织量子点的优化生长(英文)
%A Duan Ruifei
%A Wang Baoqiang
%A Zhu Zhanping
%A Zeng Yiping
%A <br>段瑞飞
%A 王宝强
%A 朱占平
%A 曾一平
%J 半导体学报
%D 2003
%I 
%X Self-assembled In 0.35Ga 0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM).In order to obtain high density and high uniformity of quantum dots,optimized conditions are concluded for MBE growth.Optimized growth conditions also compared with these of InAs/GaAs quantum dots.This will be very useful for InGaAs/GaAs QDs optoelectronic applications,such as quantum dots lasers and quantum dots infrared photodetectors.
%K InGaAs/GaAs
%K quantum dot
%K optimization
%K MBE
%K AFM
%K optoelectronics<br>InGaAs/GaAs
%K 分子束外延
%K 原子力显微镜
%K 优化
%K 光电器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DBEE20159CF22966&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=F3090AE9B60B7ED1&sid=9F481C73BF82C48F&eid=C368DFEE1EA2C91D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9