Determination of Oxygen in Heavily Doped CZ-Silicon
重掺硅中氧的测定

A method for the determination of oxygen in doped silicon (arsenic?stibium or boron) by Gas Fusion Analysis (GFA) is described.With Fourier Transform Infrared spectroscopy (FTIR),the oxygen content in a set of undoped silicon wafers is determined first,then it is used as the standards of the GFA calibration.The results obtained from GFA and FTIR are in good agreement with each other.Thus, for the sake of convenience,the oxygen determination results from GFA can be transformed into that from FTIR.The sample prepration,analysis constants are also proposed.