%0 Journal Article
%T Determination of Oxygen in Heavily Doped CZ-Silicon<br>重掺硅中氧的测定
%A LIU Pei dong
%A HUANG Xiao rong
%A SHEN Yi jun
%A LI Li ben
%A QUE Duan lin
%A <br>刘培东
%A 黄笑容
%A 沈益军
%A 李立本
%A 阙端麟
%J 半导体学报
%D 2001
%I 
%X A method for the determination of oxygen in doped silicon (arsenic?stibium or boron) by Gas Fusion Analysis (GFA) is described.With Fourier Transform Infrared spectroscopy (FTIR),the oxygen content in a set of undoped silicon wafers is determined first,then it is used as the standards of the GFA calibration.The results obtained from GFA and FTIR are in good agreement with each other.Thus, for the sake of convenience,the oxygen determination results from GFA can be transformed into that from FTIR.The sample prepration,analysis constants are also proposed.
%K oxygen in silicon
%K gas fusion analysis
%K infrared absorption spectrometry<br>硅中氧
%K 气体熔化分析法
%K 红外光谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=289ED5FDC7A788E1&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=F3090AE9B60B7ED1&sid=0414C929218EC5F4&eid=F7C51083F4D893E5&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=5