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半导体学报 1990
Investigation of Deep Level in lron Doped Semi-Insulating InP
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Abstract:
The constant current photo-conductivity(CCPC) was used in combining with the photoinducedcurrent transcient spectroscopy (PICTS) to study the deep level in iron doped semiinsulatingInP. The information on the characteristics of carrier emission and capture process,the localization of deep level wave function as well as the parameter of interaction between electronand phonon are given.The accurate energy level of Fe~(2+) is given according to theco(?)figuration coordinate diagram.