%0 Journal Article
%T Investigation of Deep Level in lron Doped Semi-Insulating InP<br>掺铁半绝缘磷化铟的深能级研究
%A Peng Chen/
%A <br>彭承
%A 李建林
%A 陆峻
%A 孙恒慧
%J 半导体学报
%D 1990
%I 
%X The constant current photo-conductivity(CCPC) was used in combining with the photoinducedcurrent transcient spectroscopy (PICTS) to study the deep level in iron doped semiinsulatingInP. The information on the characteristics of carrier emission and capture process,the localization of deep level wave function as well as the parameter of interaction between electronand phonon are given.The accurate energy level of Fe~(2+) is given according to theco(?)figuration coordinate diagram.
%K Semi-Insulating InP
%K Deep leve
%K Spectral distribution of photo ionization cross sections
%K Electron-phonon interaction<br>半绝缘磷化铟
%K 深能级
%K 光电离截面谱
%K 电子-声子相互作用
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=684EA6F5843C3816&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=38B194292C032A66&sid=C5F8B8CB20F1B3D8&eid=A58CF3BAE79427D0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0