Shallow Trench Isolation Process for Deep Sub-Micron Technologies
深亚微米隔离技术——浅沟槽隔离工艺

Shallow trench isolation (STI) is adopted as a mainstream isolation method in the deep sub micron ULSI process.The processing techniques are presented in details to introduce the various steps in a STI flow:trench formation,corner rounding,trench fill,CMP planarization and post CMP cleaning.The isolation performance,Kink effect and inverse narrow width effect of the STI isolation structure are also analyzed with a 2 dimension device simulator,namely Medici and a 3 dimension device simulator,Davinci.