%0 Journal Article
%T Shallow Trench Isolation Process for Deep Sub-Micron Technologies<br>深亚微米隔离技术——浅沟槽隔离工艺
%A Wang Xinzhu
%A Xu Qiuxia
%A Qian He
%A Shen Zuocheng
%A Ou Wen
%A <br>王新柱
%A 徐秋霞
%A 钱鹤
%A 申作成
%A 欧文
%J 半导体学报
%D 2002
%I 
%X Shallow trench isolation (STI) is adopted as a mainstream isolation method in the deep sub micron ULSI process.The processing techniques are presented in details to introduce the various steps in a STI flow:trench formation,corner rounding,trench fill,CMP planarization and post CMP cleaning.The isolation performance,Kink effect and inverse narrow width effect of the STI isolation structure are also analyzed with a 2 dimension device simulator,namely Medici and a 3 dimension device simulator,Davinci.
%K shallow trench isolation
%K chemical mechanical planarization
%K Kink effect
%K inverse narrow width effect<br>浅沟槽隔离
%K 化学机械平坦化
%K Kink效应
%K 反窄宽度效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=61E6B09BC1B4E038&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=38B194292C032A66&sid=892C6E385D640C1E&eid=C6EC7357BCACD3A4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=12