A 1.25Gb/s InP-Based Vertical Monolithic Integration of an MQW Laser Diode and an HBT Driver with a Lateral Buffer Mesa Structure
1.25Gb/sInP基多量子阱激光器与HBT驱动电路的单片集成(英文)

A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of 01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.