%0 Journal Article
%T A 1.25Gb/s InP-Based Vertical Monolithic Integration of an MQW Laser Diode and an HBT Driver with a Lateral Buffer Mesa Structure<br>1.25Gb/sInP基多量子阱激光器与HBT驱动电路的单片集成(英文)
%A Li Xianjie
%A Zeng Qingming
%A Xu Xiaochun
%A Ao Jinping
%A Zhao Fanghai
%A Yang Shuren
%A Ke Ximing
%A Wang Zhigong
%A Liu Shiyong
%A Liang Chunguang
%A <br>李献杰
%A 曾庆明
%A 徐晓春
%A 敖金平
%A 赵方海
%A 杨树人
%A 柯锡明
%A 王志功
%A 刘式墉
%A 梁春广
%J 半导体学报
%D 2002
%I 
%X A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of 01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.
%K integrated
%K optoelectronics
%K optoelectronic int egrated circuits
%K transmitter<br>光发射
%K 单片集成
%K 光电集成电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F24F0E11553C3EF8&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=94C357A881DFC066&sid=3FC4D669D19FF0C6&eid=7D1E6EEC2019967D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5