A Kind of Phased Array Lasers Made of GsAs/GaAlAs Graded Index Separate Confinement Single Quantum Well Heterostructures
一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器

Phase-locked array lasers made of MOCVD grown GaAs/GaAlA.graded-index separateconfinement heterostructure single quantum well wafer were investigated.The threshold currentof the array composed of ten ridge waveguide fundamental latteral mode lasers was 67 mA,linear output power was more than 500 mW, external differential quantum, efficiency was60%.The configuration af the arrays consisted of strongly coupling central region and weaklycoupling mirror regions, and effect of the geometrical configuration of the strongly couplingregion on the coupled supermode was examined.