%0 Journal Article
%T A Kind of Phased Array Lasers Made of GsAs/GaAlAs Graded Index Separate Confinement Single Quantum Well Heterostructures<br>一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器
%A Zhu Longde/Institute of Semiconductors Academia Sinica
%A BeijingG A B Feak/School of Eleetrical Engincering Cornell University USAJ M Ballantyne/School of Eleetrical Engincering Cornell University USAD K Wagner/Opta-elecronics Center
%A McDonnell Dauglas Astronautiess Co
%A USAPL Tihanyi/Opta-elecronics Center
%A McDonnell Dauglas Astronautiess Co
%A USA
%A <br>朱龙德
%A G.A.B.Feak
%A J.M.Ballantyne
%A D.K.Wagner
%A P.L.Tihanyi
%J 半导体学报
%D 1989
%I 
%X Phase-locked array lasers made of MOCVD grown GaAs/GaAlA.graded-index separateconfinement heterostructure single quantum well wafer were investigated.The threshold currentof the array composed of ten ridge waveguide fundamental latteral mode lasers was 67 mA,linear output power was more than 500 mW, external differential quantum, efficiency was60%.The configuration af the arrays consisted of strongly coupling central region and weaklycoupling mirror regions, and effect of the geometrical configuration of the strongly couplingregion on the coupled supermode was examined.
%K MOCVD
%K GaAs/GaAlA
%K graded-index separate-confinemet single quantum well structure
%K phased array laser
%K Array threshold
%K Output power
%K Differential quantum efficiency
%K Coupling structure
%K super mode<br>MOCVD
%K GaAlAs
%K 锁相列阵
%K 激光器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8DF0E21E84A78F57&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=F3090AE9B60B7ED1&sid=5EEA08EFB4616D1C&eid=1F94F38CF0FA5258&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0