Numerical Simulation of LDD MOSFET
轻掺杂漏(LDD)MOSFET的数值模拟

Using simulator as an aided tool for LDD MOSFET disign, the cycle and cost can con-siderably be decreased.Based on the two dimensional simulator MINIMOS and consideringthe different boundary conditions,input/output format as well as the concentration distributionof the lightly doped region,a new program FD-MINIMOS which is not only suitable forconventional MOSFET but also for the LDD MOSFET is presented.The preformance of de-creasing the channel electric field and the substrate current for LDD MOSFET can be wellsimulated by using FD-MINIMOS.The results of simulation also indicate that different lightdoping concentration has different effect to refrain the channel electric field.