%0 Journal Article
%T Numerical Simulation of LDD MOSFET<br>轻掺杂漏(LDD)MOSFET的数值模拟
%A Zheng Qingping/Fudan University
%A ShanghaiZhang Qianling/Fudan University
%A ShanghaiRuan Gang/Fudan University
%A Shanghai
%A <br>郑庆平
%A 章倩苓
%A 阮刚
%J 半导体学报
%D 1989
%I 
%X Using simulator as an aided tool for LDD MOSFET disign, the cycle and cost can con-siderably be decreased.Based on the two dimensional simulator MINIMOS and consideringthe different boundary conditions,input/output format as well as the concentration distributionof the lightly doped region,a new program FD-MINIMOS which is not only suitable forconventional MOSFET but also for the LDD MOSFET is presented.The preformance of de-creasing the channel electric field and the substrate current for LDD MOSFET can be wellsimulated by using FD-MINIMOS.The results of simulation also indicate that different lightdoping concentration has different effect to refrain the channel electric field.
%K Lightly doped drain MOSFET
%K Numerical simulation
%K Simulation program for MOSFET<br>掺杂
%K MOSFET
%K 数值模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CF406125CF3F9DCD&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=F3090AE9B60B7ED1&sid=9409F3EB075DCD5B&eid=1CBB73E9593E8833&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1