Minority Carrier Diffusion Length Measurements in n-and p-GaAs by Electrochemical Photovoltage Method
电化学光伏法测定n-和p-GaAs少子扩散长度

On the basis of electrochemical study on GaAs/electrotyte junction, a new photoelectrochemicalmethod, electrochemical photovoltage method, is reported for the determination of minoritycarrier diffusion length in compound semiconductors.The method has been successfully usedto determine the minority carrier diffusion length in n- and p-GaAs.