%0 Journal Article
%T Minority Carrier Diffusion Length Measurements in n-and p-GaAs by Electrochemical Photovoltage Method<br>电化学光伏法测定n-和p-GaAs少子扩散长度
%A Wang Zhoucheng/Fujian Institute of Research on Structure of Matter
%A Academia Sinica Peng Ruiwu/
%A <br>王周成
%A 彭瑞伍
%A 彭承
%A 孙恒慧
%J 半导体学报
%D 1990
%I 
%X On the basis of electrochemical study on GaAs/electrotyte junction, a new photoelectrochemicalmethod, electrochemical photovoltage method, is reported for the determination of minoritycarrier diffusion length in compound semiconductors.The method has been successfully usedto determine the minority carrier diffusion length in n- and p-GaAs.
%K Electrochemical photovoltage method
%K GaAs
%K Minority carrier diffusion length<br>GaAs
%K 测量
%K 少子扩散
%K 电化学光伏法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F3834D1D4DF9BA19EDE&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=5D311CA918CA9A03&sid=46C2A519EDDA03DD&eid=9A596D09E9486F3E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3