Growth of Stacked Ge Quantum Dots and Its Optical Characteristics
多层Ge量子点的生长及其光学特性

Stacked Ge quantum dots are grown on Si(100) by u ltra-high vacuum chemical vapor deposition(UHV/CVD).The morphology and size distribution of embedded and upper Ge dots are studied by TEM and AFM respectively.The influences of number of layers and thickness of Si spacer on upper Ge dots are investigated as well.An apparent blue shift (87meV) is observed from the PL sp ectrum at 10K.FWHM of Ge dots NP peak is 46meV,which indicates the narrow size d istribution of stacked Ge dots grown by UHV/CVD.