%0 Journal Article
%T Growth of Stacked Ge Quantum Dots and Its Optical Characteristics<br>多层Ge量子点的生长及其光学特性
%A Deng Ning
%A Wang Jilin
%A Huang Wentao
%A Chen Peiyi
%A Li Zhijian
%A <br>邓宁
%A 王吉林
%A 黄文韬
%A 陈培毅
%A 李志坚
%J 半导体学报
%D 2003
%I 
%X Stacked Ge quantum dots are grown on Si(100) by u ltra-high vacuum chemical vapor deposition(UHV/CVD).The morphology and size distribution of embedded and upper Ge dots are studied by TEM and AFM respectively.The influences of number of layers and thickness of Si spacer on upper Ge dots are investigated as well.An apparent blue shift (87meV) is observed from the PL sp ectrum at 10K.FWHM of Ge dots NP peak is 46meV,which indicates the narrow size d istribution of stacked Ge dots grown by UHV/CVD.
%K UHV/CVD
%K stacked Ge quantum dots
%K PL spectrum<br>超高真空化学气相淀积
%K 多层锗量子点
%K PL谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5E81F72C4ECAF91D&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=9CF7A0430CBB2DFD&sid=9822743C2D2BE348&eid=F5956B5D26BCB2A8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=10