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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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Investigation of Interfacial Reaction of Pd/a-Si:H
Pd/a-Si:H界面反应研究
Shen Bo/Institute of semiconductor, Academia Sinica, Beijing Zhao Texiu/Institute of semiconductor, Academia Sinica, Beijing Liu Hongtu/Institute of semiconductor, Academia Sinica, Beijing Wu Zhiqiang/Institute of semiconductor, Academia Sinica, Beijing Jin Shu/Institute of semiconductor, Academia Sinica, Beijing C C Hsu/Institute of semiconductor, Academia Sinica, Beijing,
沈波, 赵特秀, 刘洪图, 吴志强, 金澍, 许振嘉
Keywords: Silicide,Interference ehanced Raman scattering (IERS),Vacuum annealing,Crystallization,Hydrogen evolution
硅化物,界面反应,喇曼散射,TEM法
Abstract:
本文使用IERS(干涉增强喇曼散射),TEM和SIMS等方法研究了Pd/a-Si:H界面反应的热退火行为,发现Pd/a-Si:H界面在室温下形成非晶互混层;经160℃退火,形成晶态Pd_2Si相,比Pd/c-Si界面反应温度低;经500℃退火,未与Pd反应的非晶硅出现晶化现象。本文还观察了界面反应过程中氢的行为,发现由于界面反应,导致a-Si:H中的氢在较低温度下就开始释放。 Full-Text
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