%0 Journal Article
%T Investigation of Interfacial Reaction of Pd/a-Si:H<br>Pd/a-Si:H界面反应研究
%A Shen Bo/Institute of semiconductor
%A Academia Sinica
%A Beijing Zhao Texiu/Institute of semiconductor
%A Academia Sinica
%A Beijing Liu Hongtu/Institute of semiconductor
%A Academia Sinica
%A Beijing Wu Zhiqiang/Institute of semiconductor
%A Academia Sinica
%A Beijing Jin Shu/Institute of semiconductor
%A Academia Sinica
%A Beijing C C Hsu/Institute of semiconductor
%A Academia Sinica
%A Beijing
%A <br>沈波
%A 赵特秀
%A 刘洪图
%A 吴志强
%A 金澍
%A 许振嘉
%J 半导体学报
%D 1990
%I 
%X 本文使用IERS(干涉增强喇曼散射),TEM和SIMS等方法研究了Pd/a-Si:H界面反应的热退火行为,发现Pd/a-Si:H界面在室温下形成非晶互混层;经160℃退火,形成晶态Pd_2Si相,比Pd/c-Si界面反应温度低;经500℃退火,未与Pd反应的非晶硅出现晶化现象。本文还观察了界面反应过程中氢的行为,发现由于界面反应,导致a-Si:H中的氢在较低温度下就开始释放。
%K Silicide
%K Interference ehanced Raman scattering (IERS)
%K Vacuum annealing
%K Crystallization
%K Hydrogen evolution<br>硅化物
%K 界面反应
%K 喇曼散射
%K TEM法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F3887B5F783AF637015&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=5D311CA918CA9A03&sid=C2053D4E59904B8A&eid=90773C2285A2F0BB&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2