Asymmetry LDD MOSFET
非对称轻掺杂漏(LDD)MOSFET

A new MOSFET structure-Asymmetry LDD MOSFET,which contains only a lightlydoped buffer region near the drain, has been proposed and fabricated.Asymmetry LDD structure can decrease source-drain series resistance and improve transconductance as comparedwith the conventional LDD MOSFET, keeping the same capability of reducing hot-carrier effects.CMOS ICs consisting of the asymmetry LDD devices exhibit a better performance inspeed.