%0 Journal Article
%T Asymmetry LDD MOSFET<br>非对称轻掺杂漏(LDD)MOSFET
%A CHEN Xueliang/
%A <br>陈学良
%A 王自惠
%J 半导体学报
%D 1990
%I 
%X A new MOSFET structure-Asymmetry LDD MOSFET,which contains only a lightlydoped buffer region near the drain, has been proposed and fabricated.Asymmetry LDD structure can decrease source-drain series resistance and improve transconductance as comparedwith the conventional LDD MOSFET, keeping the same capability of reducing hot-carrier effects.CMOS ICs consisting of the asymmetry LDD devices exhibit a better performance inspeed.
%K LDD MOSFET
%K Hot-carrier effects
%K Series resistance<br>MOSFET
%K 非对称
%K 掺杂
%K 热载流子
%K 源漏
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=78F3980A19C8FCBF&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=58F693790F887B3B&eid=12DC19455C3A2FA8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1